| PART |
Description |
Maker |
| VI-B64-MU-BM VI-B61-CU-BM VI-B63-EU-BM VI-B63-MU-B |
LED IR 935NM PLASTIC SIDELOOK 电池充电电流源模
RES, 160 OHM 1/8W 5% 电池充电电流源模
Battery Charger Current Source Modules 电池充电电流源模
TRANS NPN LO SAT 60V 4.5A TO-92
TRANS PNP LO SAT 60V 5.5A SOT223
47K OHM 1/10W 5% SMT RESISTOR
TRANS PNP LO SAT 60V 3.5A TO-92
|
Vicor, Corp.
VICOR[Vicor Corporation]
|
| TC7116CPL |
TRANS NPN 10VCEO 80MA MINI-3P 3-1/2数字模拟数字转换器拒不退
|
TelCom Semiconductor, Inc.
|
| DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ |
I2C Serial Real-Time Clock
TRANS NPN BIPOL DUAL 160V SOT363
TRANS NPN DARL 40V SMD SOT-23
TRANSISTOR, NPN, SWITCHING , GENERAL PURPOSE, 3-PIN SOT-23
TRANS NPN 160V 350MW SMD SOT-23
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
http://
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772
Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 2N2777 2N2769 |
Trans GP BJT NPN 250V 30A 3-Pin TO-63
Trans GP BJT NPN 150V 0.5A 3-Pin TO-39
|
New Jersey Semiconductor
|
| BC413B BC413C BC414B BC414C |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.010A Ic, 180 - 460 hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 380 - 800 hFE
|
Continental Device India Limited
|
| BC548 |
Trans GP BJT NPN 30V 0.1A 3-Pin TO-92
NPN General Purpose Amplifier
|
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
